PART |
Description |
Maker |
MGFC39V5867 |
5.8~6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A) Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲) Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲)
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TECCOR[Teccor Electronics] Littelfuse, Inc. TE Connectivity, Ltd.
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CAT93C56JA CAT93C56JE CAT93C56JI CAT93C56KA CAT93C |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS 2K-Bit Microwire Serial EEPROM
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Samsung Semiconductor Co., Ltd. Macronix International Co., Ltd. HIROSE ELECTRIC Co., Ltd. Microchip Technology, Inc. Rohm Co., Ltd. Vicor, Corp. CATALYST[Catalyst Semiconductor] http://
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STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT 40 个字x 1 线5 x 7 点阵字符和光 N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
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MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET From old datasheet system 14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET From old datasheet system 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MLD2N06CL ON2069 MLD2N06CL-D |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET From old datasheet system Internally Clamped, Current Limited N hannel Logic Level Power MOSFET SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET
|
Motorola, Inc. ON Semiconductor
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应 2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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